Wugang Liao received his Ph.D. in 2016 from Huazhong University of Science and Technology, Wuhan, China. From 2016 to 2018, he was a research fellow at the National University of Singapore. He is currently an Associate Professor in the College of Electronics and Information Engineering at Shenzhen University, China. His research interests include semiconductor device physics, particularly 2D semiconductor devices, RF integration, and advanced packaging.

[1]Ph.D.: 2011.09-2016.07, Huazhong University of Science & Technology, Wuhan, China

[1]2023- : Shenzhen University, Associate Professor

[2]2018-2023 : Shenzhen University, Assistant Professor

[3]2016-2018: National University of Singapore, Research Fellow

[1]Shenzhen Overseas High-Caliber Talent

[2]National Scholarship for Doctoral Students

[1]Semicondutor Device Physics

[2]RF Integration

[3]Advanced Packaging

[1]Wugang Liao^*, et al., Growth of tellurium nanobelts on h-BN for p-type transistors with ultrahigh hole mobility. Nano-Micro Letters, 2022, 14(1): 1-12.

[2]Wugang Liao^#, et al., Artificial Synapses Based on Multiterminal Memtransistors for Neuromorphic Application. Advanced Functional Materials, 2019, 1901106.

[3]Wugang Liao^*, et al., Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics. InfoMat 2021, 3, 362-396.

[4]Wugang Liao^*, et al., Mechanisms of current fluctuation in high-mobility p-type tellurium field-effect transistors, IEEE Transactions on Electron Devices 2024

[5]Wugang Liao, et al., pH Sensing and low-frequency noise characteristics of low temperature (400 °C) p-Channel SOI Schottky ISFETs. IEEE Electron Device Letters, 2017, 38: 1146-1149.

[6]Wugang Liao^#, et al., Unipolar n-Type Conduction in Black Phosphorus Induced by Atomic Layer Deposited MgO. IEEE Electron Device Letters, 2019, 40(3), 471-474.

[7]Wugang Liao, et al., Electrical performance and low frequency noise in hexagonal boron nitride encapsulated MoSe₂ dual-gated field effect transistors. Applied Physics Letters, 2017, 111: 082105.

[8]Wugang Liao^*, et al., Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics, Nano Research 2023, 16(2): 3104-3124.

[9]Wugang Liao^*, et al., Printed electronics based on 2D material inks: preparation, properties, and applications toward memristors, Small Methods 2023, 7(2): 2201156.

[10]Wugang Liao^*, et al., A High‐entropy oxyhydroxide with a graded metal network structure for efficient and robust alkaline overall water splitting. Advanced Science 2024, 202406008.

[11]Wugang Liao^*, et al., Low dimensional transition metal oxide towards advanced electrochromic devices. Nano Energy 2022, 100, 107479.

[12]Wugang Liao^*, et al., BaTiO₃-assisted exfoliation of boron nitride nanosheets for high-temperature energy storage dielectrics and thermal management. Chemical Engineering Journal 2022, 427, 131860.

[13]Wugang Liao, et al., Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges. Nanoscale Horizons 2020, 5, 787-807.

[14]Wugang Liao*, et al., Van der Waals heterostructures for optoelectronics: Progress and prospects. Applied Materials Today 2019, 16, 435-455.

[15]Wugang Liao^*, et al., Self-assembling SiC nanoflakes/MXenes composites embedded in polymers towards efficient electromagnetic wave attenuation. Applied Surface Science 2022, 151463.

[16]Wugang Liao^*, et al., Phase transitions and water splitting applications of 2D transition metal dichalcogenides and metal phosphorous trichalcogenides. Advanced Science 2021, 8(10), 2002284.

[17]Wugang Liao, et al., Low-Frequency Noise in Layered ReS₂ Field Effect Transistors on HfO₂ and Its Application for pH Sensing. ACS Applied Materials & Interfaces, 2018, 10(8): 7248-7255.

[18]Wugang Liao, et al., Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits. Nanoscale, 2018, 10(36), 17007-17014.

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