个人简介

廖武刚，博士，长聘副教授，深圳市海外高层次人才，射频异质异构集成全国重点实验室成员。毕业于华中科技大学（HUST），获微电子学与固体电子学专业工学博士学位，之后在新加坡国立大学（NUS）从事博士后研究。主持了国家自然科学基金青年项目、广东省自然科学基金面上项目等，参与新加坡ASTAR项目、国家自然科学基金面上项目等。已在IEEE Electron Device Letters, IEEE Transactions on Electron Devices, Applied Physics Letters, InfoMat, Advanced Functional Materials, Nano-Micro Letters, Advanced Science, Nature Communications等国际权威学术期刊上发表论文60多篇，论文被引次数超2000次；授权国家发明专利6项；撰写1本中文教材（《异质异构集成封装技术》）；获博士研究生国家奖学金。

主要研究方向

异质异构集成封装、新一代半导体器件与集成、电子设计自动化（EDA）、集成电路设计

招生方向

电子科学与技术（学术硕士）

集成电路工程（专业硕士）

学术兼职

2023-至今  深圳市半导体异质集成技术重点实验室  副主任

2021-2024 Nanomaterials  期刊客座编辑

2022-2023 Electronics  期刊客座编辑

2024       IEEE电子技术国际会议 Session Chair

2023-2025  IEEE电子技术国际会议  Technique Committees

长期担任Advanced Materials, Nano-Micro Letters, ACS Nano, IEEE Electron Device Letters等期刊审稿人

科研平台

射频异质异构全国重点实验室（深圳大学）、深圳市半导体异质集成技术重点实验室、深圳大学射频电路与系统研究中心

科研项目

1.国家自然科学基金-青年科学基金项目 2024-2026 主持

2.广东省基础与应用基础研究面上项目 2023-2025 主持

3.深圳市高端人才科研启动项目2020– 2022 主持

4.  2035追求卓越研究计划 2024-2025 主持

教学课程

半导体器件物理

集成电路工艺原理

代表性论文

[1]W. Liao^*, et al., Mechanisms of current fluctuation in high-mobility p-type tellurium field-effect transistors, IEEE Transactions on Electron Devices 2024

[2]W. Liao^*, et al., Growth of tellurium nanobelts on h-BN for p-type transistors with ultrahigh hole mobility. Nano-Micro Letters, 2022, 14(1): 1-12.

[3]W. Liao^#, et al., Artificial synapses based on multiterminal memtransistors for neuromorphic application. Advanced Functional Materials, 2019, 1901106.（高被引论文）

[4]W. Liao^*, et al., Synthesis of two‐dimensional transition metal dichalcogenides for electronics and optoelectronics. InfoMat 2021, 3, 362-396.

[5]W. Liao, et al., pH Sensing and low-frequency noise characteristics of low temperature (400 °C) p-Channel SOI Schottky ISFETs. IEEE Electron Device Letters, 2017, 38: 1146-1149.

[6]W. Liao^#, et al., Unipolar n-type conduction in black phosphorus induced by atomic layer deposited MgO. IEEE Electron Device Letters, 2019, 40(3), 471-474.

[7]W. Liao, et al., Electrical performance and low frequency noise in hexagonal boron nitride encapsulated MoSe₂ dual-gated field effect transistors. Applied Physics Letters, 2017, 111: 082105.

[8]W. Liao^*, et al., Defect engineering of two-dimensional materials towards next-generation electronics and optoelectronics, Nano Research 2023, 16(2): 3104-3124.

[9]W. Liao^*, et al., Printed electronics based on 2D material inks: preparation, properties, and applications toward memristors, Small Methods 2023, 7(2): 2201156.

[10]W. Liao^*, et al., A High‐entropy oxyhydroxide with a graded metal network structure for efficient and robust alkaline overall water splitting. Advanced Science 2024, 202406008.

[11]W. Liao^*, et al., Low dimensional transition metal oxide towards advanced electrochromic devices. Nano Energy 2022, 100, 107479.

[12]W. Liao^*, et al., BaTiO₃-assisted exfoliation of boron nitride nanosheets for high-temperature energy storage dielectrics and thermal management. Chemical Engineering Journal 2022, 427, 131860.

[13]W. Liao, et al., Interface engineering of two-dimensional transition metal dichalcogenides towards next-generation electronic devices: recent advances and challenges. Nanoscale Horizons 2020, 5, 787-807.

[14]W. Liao^*, et al., Van der Waals heterostructures for optoelectronics: Progress and prospects. Applied Materials Today 2019, 16, 435-455.

[15]W. Liao^*, et al., Self-assembling SiC nanoflakes/MXenes composites embedded in polymers towards efficient electromagnetic wave attenuation. Applied Surface Science 2022, 151463.

[16]W. Liao^*, et al., Phase transitions and water splitting applications of 2D transition metal dichalcogenides and metal phosphorous trichalcogenides. Advanced Science 2021, 8(10), 2002284.

[17]W. Liao, et al., Low-frequency noise in layered ReS₂ field effect transistors on HfO₂ and its application for pH sensing. ACS Applied Materials & Interfaces, 2018, 10(8): 7248-7255.

[18]W. Liao, et al., Efficient and reliable surface charge transfer doping of black phosphorus via atomic layer deposited MgO toward high performance complementary circuits. Nanoscale, 2018, 10(36), 17007-17014.

欢迎感兴趣的博士研究生/硕士研究生加入；诚招有半导体与集成电路等专业背景的博士后和科研助理；

请发送简历至邮箱：wgliao@szu.edu.cn。

更新于2024.9.27